%0 Journal Article
%@holdercode {isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S}
%@nexthigherunit 8JMKD3MGPCW/3ESR3H2
%@archivingpolicy denypublisher denyfinaldraft24
%@issn 0925-8388
%@usergroup administrator
%@usergroup banon
%@usergroup simone
%3 structural and electrical.pdf
%B Journal of Alloys and Compounds
%X SrBi2(Ta0.5Nb0.5)2O9 (SBTN) thin films were obtained by polymeric precursor method on Pt/Ti/SiO2/Si(1 0 0) substrates. The film is dense and crack-free after annealing at 700 °C for 2 h in static air. Crystallinity and morphological characteristic were examined by X-ray diffraction (XRD), field emission scanning electron microscopy (FEG-SEM) and atomic force microscopy (AFM). The films displayed rounded grains with a superficial roughness of 3.5 nm. The dielectric permittivity was 122 with loss tangent of 0.040. The remanent polarization (Pr) and coercive field (Ec) were 5.1 ìC/cm2 and 96 kV/cm, respectively.
%8 June
%N 1/2
%T Structural and electrical properties of SrBi2(Ta0.5Nb0.5)2O9 thin films
%@secondarytype PRE PI
%K Ferroelectric, Chemical synthesis, Thin films, Nanostructures.
%@visibility shown
%@group
%@group
%@group
%@group LAS-CTE-INPE-MCT-BR
%@secondarykey INPE--PRE/
%2 sid.inpe.br/mtc-m17@80/2007/12.06.17.54.32
%@affiliation Instituto de Química, Universidade Estadual Paulista (UNESP)
%@affiliation Instituto de Química, Universidade Estadual Paulista (UNESP)
%@affiliation Instituto de Química, Universidade Estadual Paulista (UNESP)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto de Química, Universidade Estadual Paulista (UNESP)
%@affiliation Instituto de Química, Universidade Estadual Paulista (UNESP)
%P 500-503
%4 sid.inpe.br/mtc-m17@80/2007/12.06.17.54
%D 2008
%V 458
%@doi 10.1016/j.jallcom.2007.04.039
%A Amsei Junior, N. L.,
%A Simões, A. Z.,
%A Pianno, R. F. C.,
%A Zanetti, Sonia Maria,
%A Longo, E.,
%A Varela, J. A.,
%@dissemination WEBSCI; PORTALCAPES.
%@area FISMAT