%0 Journal Article
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%@nexthigherunit 8JMKD3MGPCW/3ESR3H2
%@archivingpolicy denypublisher denyfinaldraft24
%@resumeid
%@resumeid 8JMKD3MGP5W/3C9JGUH
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%3 X ray multiple difrraction.pdf
%2 sid.inpe.br/mtc-m17@80/2006/12.06.13.07.40
%4 sid.inpe.br/mtc-m17@80/2006/12.06.13.07
%X TiO2 and TiNxOy thin films grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) on top of Si(0 0 1) substrate were characterized by X-ray multiple diffraction. X-ray reflectivity analysis of TiO2[1 1 0] and TiNO[1 0 0] polycrystalline layers allowed to determine the growth rate (−80 Å/min) of TiO2 and (−40 Å/min) of TiNO films. X-ray multiple diffraction through the Renninger scans, i.e., -scans for (0 0 2)Si substrate primary reflection is used as a non-conventional method to obtain the substrate lattice parameter distortion due to the thin film conventional deposition, from where the information on film strain type is obtained.
%8 Nov.
%N 3
%T X-ray multiple diffraction in the characterization of TiNO and TiO2 thin films grown on Si(0 0 1)
%@secondarytype PRE PI
%K TiO2, TiNO, MOCVD, Thin film, X-ray multiple diffraction, Renninger scan.
%@group
%@group LAS-INPE-MCT-BR
%@secondarykey INPE-14414-PRE/9498
%@copyholder SID/SCD
%@issn 0169-4332
%@affiliation IFGW, UNICAMP
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Thin Films and Nanostructure Group, Universite de Bourgogne
%@affiliation Thin Films and Nanostructure Group, Universite de Bourgogne
%@affiliation Thin Films and Nanostructure Group, Universite de Bourgogne
%B Applied Surface Science
%P 1590-1594
%D 2006
%V 253
%A Chiaramonte, T.,
%A Abramof,  Eduardo,
%A Fabreguette, F.,
%A Sacilotti,
%A Cardoso, L. P.,
%@dissemination WEBSCI; PORTALCAPES; COMPENDEX.
%@area FISMAT