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@MastersThesis{Abreu:2006:CaElCé,
               author = "Abreu, Ricardo Augusto Santos de",
                title = "Caracteriza{\c{c}}{\~a}o el{\'e}trica de c{\'e}lulas solares 
                         de tripla jun{\c{c}}{\~a}o-GaInP/GaAs/Ge",
               school = "Instituto Nacional de Pesquisas Espaciais (INPE)",
                 year = "2006",
              address = "S{\~a}o Jos{\'e} dos Campos",
                month = "2006-03-24",
             keywords = "c{\'e}lula solar, c{\'e}lula solar jun{\c{c}}{\~a}o vertical, 
                         heterojun{\c{c}}{\~o}es, fotocondutividade, dispositivos 
                         semicondutores, solar cell, vertical junction solar cell, 
                         heterojunctions, photoconductivity, semiconductor devices.",
             abstract = "C{\'e}lulas solares tripla jun{\c{c}}{\~a}o (TJ) utilizam uma 
                         combina{\c{c}}{\~a}o de materiais semicondutores para capturar 
                         mais eficientemente os f{\'o}tons na faixa de 300nm a 1800nm do 
                         espectro solar. A efici{\^e}ncia m{\'{\i}}nima de 
                         convers{\~a}o AM0 para uma c{\'e}lula de TJ de primeira 
                         gera{\c{c}}{\~a}o para uso espacial {\'e} de 26%. O GaInP, GaAs 
                         e Ge foram escolhidos devido a capacidade coletiva do 
                         espa{\c{c}}amento entre bandas de se ajustar ao espectro solar. 
                         GaInP, com energia de 1,85 eV absorve os f{\'o}tons nas partes 
                         ultravioleta e vis{\'{\i}}vel do espectro solar. GaAs, com 
                         energia de 1,42eV absorve pr{\'o}ximo ao infravermelho e Ge 
                         absorve os f{\'o}tons do infravermelho com energia superior a 
                         0,67eV. Um m{\'e}todo experimental in{\'e}dito foi criado para 
                         determinar diretamente as correntes fotogeradas das 
                         jun{\c{c}}{\~o}es individuais da c{\'e}lula de 
                         tripla-jun{\c{c}}{\~a}o. A grande vantagem desse m{\'e}todo 
                         {\'e} sua simplicidade e sua f{\'a}cil implementa{\c{c}}{\~a}o 
                         em qualquer laborat{\'o}rio com sistema el{\'e}trico de 
                         caracteriza{\c{c}}{\~a}o de c{\'e}lula solar e um simulador 
                         solar. Esse aparato experimental consiste de uma l{\^a}mpada 
                         principal interna do simulador solar de g{\'a}s 
                         multi-halog{\^e}neo de 545W- MHG, e dois pares de l{\^a}mpadas 
                         vermelhas externas ao simulador. Tr{\^e}s curvas I-V s{\~a}o 
                         medidas usando um sistema de aquisi{\c{c}}{\~a}o de dados. A 
                         primeira medida {\'e} obtida usando apenas a l{\^a}mpada MHG; a 
                         segunda curva I-V com um par de l{\^a}mpadas vermelhas ligadas e 
                         a terceira curva {\'e} medida com as quatro l{\^a}mpadas 
                         vermelhas ligadas. O ajuste de todas essas curvas pelo ORIGIN 
                         simultaneamente, n{\~a}o individualmente, permite determinar a 
                         corrente fotogerada das tr{\^e}s jun{\c{c}}{\~o}es, o produto 
                         das correntes de satura{\c{c}}{\~a}o e a resist{\^e}ncia em 
                         s{\'e}rie da c{\'e}lula de TJ. O comportamento da c{\'e}lula em 
                         fun{\c{c}}{\~a}o da temperatura foi analisado empregando essa 
                         nova t{\'e}cnica. Os par{\^a}metros que caracterizam as 
                         c{\'e}lulas foram obtidos, mostrando-se de acordo com os valores 
                         da literatura. ABSTRACT: Triple junction solar cells use a 
                         combination of semiconductor materials to more efficiently capture 
                         photons in the range of 300nm to 1800nm of sun solar spectrum. 
                         Minimum average conversion efficiency AM0 for first generation TJ 
                         solar cell for space use is 26,0%. The GaInP, GaAs and Ge were 
                         select because of their collective ability to match bandgap 
                         energies with the solar spectrum. GaInP, with a bandgap energy of 
                         1,85 eV absorbs photons in the ultraviolet and visible part of the 
                         solar spectra. GaAs (Eg = 1,42V) absorbs near infrared light and 
                         Ge absorbs all the lower photon energies in the infrared that are 
                         above 0,67 eV. A new experimental method was developed for 
                         directly determine the photogenerated current junctions within the 
                         triple junction solar cell. The main advantage of this new 
                         technique is its simplicity and its easy implementation at any 
                         laboratory with an electrical characterization solar cell system 
                         and a solar simulator. The experimental apparatus consists of an 
                         internal main lamp of solar simulator of multi halogen gas, 545W 
                         MHG, and two sets or red PAR lamps external of simulator. Three 
                         illuminated I-V curves are measured using a data acquisition 
                         system. The first measurement is obtained using only the MHG lamp; 
                         the second is with the MHG lamp with an additional set of red PAR 
                         lamp and the third curve is measured with four red lamps turned 
                         on. The fitting of all these curves by ORIGIN simultaneously, not 
                         individually, permit us determine the photogenerated current of 
                         three junctions, the product of saturation currents and serie 
                         resistence of TJ solar cell. The behavior of the cells as a 
                         function of temperature was analysed using this new method. Values 
                         for the parameter that characterize these cells were obtained, 
                         showing a good agreement with already reported values.",
            committee = "An, Chen Ying (presidente) and Veissid, Nelson (orientador) and 
                         Beloto, Ant{\^o}nio Fernando and Costa Vaz, Celio",
           copyholder = "SID/SCD",
         englishtitle = "Electrical characterization of triple junction solar cells - 
                         GAINP/GAAS/GE",
             language = "pt",
                pages = "185",
                  ibi = "6qtX3pFwXQZGivnJSY/LiDeN",
                  url = "http://urlib.net/rep/6qtX3pFwXQZGivnJSY/LiDeN",
           targetfile = "publicacao.pdf",
        urlaccessdate = "06 dez. 2019"
}


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