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1. Identificação
Tipo de ReferênciaArtigo em Revista Científica (Journal Article)
Sitemtc-m16b.sid.inpe.br
Código do Detentorisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identificador6qtX3pFwXQZGivnK2Y/SnKDs
Repositóriosid.inpe.br/mtc-m17@80/2007/12.06.18.37   (acesso restrito)
Última Atualização2007:12.06.18.37.24 (UTC) administrator
Repositório de Metadadossid.inpe.br/mtc-m17@80/2007/12.06.18.37.25
Última Atualização dos Metadados2018:06.05.03.36.05 (UTC) administrator
Chave SecundáriaINPE-15046-PRE/9957
DOI10.1016/j.diamond.2006.11.052
ISSN0925-9635
Chave de CitaçãoCapoteJaMiLeViFr:2007:DeHaAm
TítuloDeposition of hard amorphous hydrogenated carbon films by radiofrequency parallel-plate hollow-cathode plasmas
Ano2007
MêsMar.
Data de Acesso27 abr. 2024
Tipo SecundárioPRE PI
Número de Arquivos1
Tamanho416 KiB
2. Contextualização
Autor1 Capote, Gil
2 Jacobsohn, L. G.
3 Michel, M. D.
4 Lepienski, C. M.
5 Vieira, A. L.
6 Franceschini, D. F.
Grupo1 LAS-INPE-MCT-BR
Afiliação1 Instituto Nacional de Pesquisas Espaciais (INPE)
2 Materials Science & Technology Division, Los Alamos National Laboratory
3 Departamento de Física, Universidade Federal do Paraná
4 Departamento de Física, Universidade Federal do Paraná
5 Instituto de Física, Universidade Federal Fluminense
6 Instituto de Física, Universidade Federal Fluminense
RevistaDiamond and Related Materials
Volume16
Número3
Páginas626-622
Histórico (UTC)2007-12-19 16:55:09 :: simone -> administrator ::
2012-10-24 00:08:48 :: administrator -> simone :: 2007
2013-02-20 15:20:12 :: simone -> administrator :: 2007
2018-06-05 03:36:05 :: administrator -> marciana :: 2007
3. Conteúdo e estrutura
É a matriz ou uma cópia?é a matriz
Estágio do Conteúdoconcluido
Transferível1
Tipo do ConteúdoExternal Contribution
Palavras-ChaveHollow-cathode
Plasma deposition
Amorphous hydrogenated carbon
Mechanical properties
ResumoHard amorphous hydrogenated carbon (a-C:H) films were deposited by plasma decomposition of CH4 gas in a RF parallel-plate hollow-cathode system. The deposition system was built by placing a metallic plate in parallel to and in electrical contact with an usual RF-PECVD planar cathode. Self-bias versus RF power curves were used to make an initial characterization of plasma discharges in nitrogen gas atmospheres, for pressures between 10 and 100 mTorr. The strongly increased power consumption to obtain the same self-bias in the hollow-cathode system evidenced an increase in plasma density. The a-C:H films were deposited onto Si single crystalline substrates, in the − 50 to − 500 V self-bias range, at 5, 10 and 50 mTorr deposition pressures. The film deposition rate was found to be about four times than that usually observed for single-cathode RF-PECVD-deposited films, under methane atmosphere, at similar pressure and self-bias conditions. Characterization of film structure was carried out by Raman spectroscopy on films deposited at 10 and 50 mTorr pressures. Gaussian deconvolution of the Raman spectra in its D and G bands shows a continuous increase in the ID/IG integrated band intensity ratio upon self-bias increase, obeying the expected increasing behavior of the sp2 carbon atom fraction. The peak position of the G band was found to increase up to − 300 V self-bias, showing a nearly constant behavior for higher self-bias absolute values. On the other hand, the G band width showed a nearly constant behavior within the entire self-bias range. Nanohardness measurements have shown that films deposited with self-bias greater than 300 V are as hard as films obtained by the usual PECVD techniques, showing a maximum hardness of about 18 GPa. Films were also found to develop high internal compressive stress. The stress dependence on self-bias showed a strong maximum at about − 200 V self-bias, with a maximum stress value of about 5 GPa.
ÁreaFISMAT
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4. Condições de acesso e uso
Idiomaen
Arquivo Alvodeposition of hard.pdf
Grupo de Usuáriosadministrator
simone
Visibilidadeshown
Detentor da CópiaSID/SCD
Política de Arquivamentodenypublisher denyfinaldraft24
Permissão de Leituradeny from all and allow from 150.163
5. Fontes relacionadas
Unidades Imediatamente Superiores8JMKD3MGPCW/3ESR3H2
DivulgaçãoWEBSCI; PORTALCAPES; COMPENDEX.
Acervo Hospedeirolcp.inpe.br/ignes/2004/02.12.18.39
cptec.inpe.br/walmeida/2003/04.25.17.12
6. Notas
Campos Vaziosalternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage e-mailaddress electronicmailaddress format isbn label lineage mark mirrorrepository nextedition notes orcid parameterlist parentrepositories previousedition previouslowerunit progress project readergroup resumeid rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype
7. Controle da descrição
e-Mail (login)marciana
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